Datasheet > CJD2955_10

CJD2955_10

更新时间： 2024-11-25 09:25:15

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	420K
描述
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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CJD2955_10 数据手册

CJD2955 PNP

CJD3055 NPN

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD2955,

CJD3055 types are Complementary Silicon Power

Transistors manufactured by the epitaxial base

process, mounted in a surface mount package

designed for high current amplifier and switching

applications.

MARKING: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

5.0

Continuous Collector Current

Continuous Base Current

Power Dissipation

6.0

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

1.75

-65 to +150

6.25

71.4

T , T

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=30V

CEO

CEV

CBO

EBO

=70V, V

=70V

=1.5V

BE(off)

=1.5V, T =150°C

2.0

=70V, T =150°C

=5.0V

2.0

500

I =30mA

CEO

CE(SAT)

BE(ON)

I =4.0A, I =400mA

1.1

8.0

1.8

100

I =10A, I =3.3A

=4.0V, I =4.0A

5.0

2.0

=4.0V, I =10A

=10V, I =500mA, f=1.0MHz

MHz

R3 (4-January 2010)

中文翻译

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