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CJD122BKPBFREE PDF预览

CJD122BKPBFREE

更新时间: 2024-11-22 05:31:39
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CENTRAL /
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2页 557K
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Transistor,

CJD122BKPBFREE 数据手册

 浏览型号CJD122BKPBFREE的Datasheet PDF文件第2页 
CJD122 NPN  
CJD127 PNP  
www.centralsemi.com  
SURFACE MOUNT SILICON  
COMPLEMENTARY  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CJD122 and  
CJD127 are complementary silicon power Darlington  
transistors manufactured in a surface mount package  
designed for low speed switching and amplifier  
applications.  
MARKING: FULL PART NUMBER  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
V
V
V
100  
100  
5.0  
8.0  
16  
V
V
V
A
A
mA  
W
W
°C  
°C/W  
°C/W  
CBO  
CEO  
EBO  
I
C
I
CM  
I
120  
20  
B
P
P
D
D
Power Dissipation (T =25°C)  
1.75  
-65 to +150  
6.25  
71.4  
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
J
stg  
JC  
JA  
Θ
Θ
Thermal Resistance  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
V
V
V
V
V
=50V  
10  
μA  
CEO  
CEV  
CEV  
CBO  
EBO  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
FE  
T
ob  
ob  
fe  
CE  
CE  
CE  
CB  
EB  
=100V, V  
=100V, V  
=100V  
=1.5V  
=1.5V, T =125°C  
10  
500  
10  
μA  
μA  
μA  
mA  
V
V
V
V
V
BE(off)  
BE(off)  
C
=5.0V  
2.0  
BV  
I =30mA  
100  
C
V
V
V
V
h
h
f
C
C
h
I =4.0A, I =16mA  
2.0  
4.0  
4.5  
2.8  
12000  
C
B
B
B
I =8.0A, I =80mA  
C
I =8.0A, I =80mA  
C
V
=4.0V, I =4.0A  
=4.0V, I =4.0A  
=4.0V, I =8.0A  
=4.0V, I =3.0A, f=1.0MHz  
=10V, I =0, f=1.0MHz (CJD122)  
=10V, I =0, f=1.0MHz (CJD127)  
=4.0V, I =3.0A, f=1.0kHz  
CE  
CE  
CE  
CE  
CB  
CB  
CE  
C
C
C
C
V
V
V
V
V
V
1000  
100  
4.0  
MHz  
pF  
pF  
200  
300  
300  
E
E
C
R3 (21-January 2013)  

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