是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.09 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 25 MHz |
VCEsat-Max: | 2 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CJD117BKLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD117TR13 | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD117TR13LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD122 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR | |
CJD122_10 | CENTRAL |
获取价格 |
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
CJD122BK | CENTRAL |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CJD122BKPBFREE | CENTRAL |
获取价格 |
Transistor, | |
CJD122LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CJD122NPN | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR | |
CJD122-NPN | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |