是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.1 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
基于收集器的最大容量: | 100 pF | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 功耗环境最大值: | 20 W |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 25 MHz | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CJD115 | CDIL |
获取价格 |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | |
CJD115PNP | CDIL |
获取价格 |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | |
CJD117 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR | |
CJD117BKLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD117TR13 | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD117TR13LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
CJD122 | CENTRAL |
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR | |
CJD122_10 | CENTRAL |
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SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
CJD122BK | CENTRAL |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CJD122BKPBFREE | CENTRAL |
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Transistor, |