Datasheet > CJD110NPN

CJD110NPN

更新时间： 2024-11-19 01:09:15

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
6页	105K
描述
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

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中文翻译

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CJD110NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

CJD110 NPN

CJD115 PNP

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

DPAK (TO-252)

Plastic Package

Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching

Regulators, Converters and Power Amplifiers

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

UNIT

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Peak

V_CEO

V_EBO

I_C

I_B

Base Current

Total Power Dissipation T_c=25ºC

P_D

0.16

W/ºC

Derate Above 25ºC

Total Power Dissipation T_a=25ºC

Derate Above 25ºC

P_D

1.75

0.014

Operating and Storage Junction

Temperature Range

T_j,T_stg

- 65 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

6.25

71.4

ºC/W

*R_{th (j-a)}

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

**V_CEO(sus)

I_CEO

TEST CONDITION

I_C=30mA, I_B=0

V_CE=30V, I_B=0

MIN TYP MAX

100

UNIT

Collector Emitter Sustaining Voltage

Collector Cut Off Current

I_CBO

V_CB=60V, I_E=0

V_CB=40V, I_E=0

V_EB=5V, I_C=0

I_EBO

I_CEX

2.0

Emitter Cut Off Current

Collector Cut Off Current

V_CE=40V, V_{BE (off)}=1.5V

V_CE=40V, V_{BE (off)}=1.5V,

T_c=125ºC

500

h_FE

I_C=0.5A, V_CE=3V

I_C=2A, V_CE=3V

I_C=4A, V_CE=3V

500

1000

200

DC Current Gain

12000

*These rating are applicable when surface mounted on the minimum pad sizes recommended

**Pulse Test:- Pulse Width < 300ms, Duty Cycle < 2%

CJD110_115 Rev020707E

Data Sheet

Page 1 of 6

Continental Device India Limited

12 3 4 5 6

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