Datasheet > CJD04N65

CJD04N65

更新时间： 2024-11-19 14:54:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1144K
描述
TO-251S

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中文翻译

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数据手册

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CJD04N65 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-251S Plastic-Encapsulate MOSFETS

CJD04N65

N-Channel Power MOSFET

TO-251S

I_D

V_(BR)DSS

R_DS(on)TYP

2.3Ω 10V

650V

GENERAL DESCRIPTION

This advanced high voltage MOSFET is designed to stand high

energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode fast

recovery time. Desighed for high voltage, high speed switching

applications such as power supplies, converters, power motor

controls and bridge circuits.

1. GATE

2. DRAIN

3. SOURCE

FEATURE

High Current Rating

Lower R_DS(on)

Lower Capacitance

Lower Total Gate Charge

Tighter V_SDSpecifications

Avalanche Energy Specified

MARKING

EQUIVALENT CIRCUIT

D04N65 = Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

650

±30

Gate-Source Voltage

Continuous Drain Current

4.0

Pulsed Drain Current

I_DM

Single Pulsed Avalanche Energy (note1)

Power Dissipation

E_AS

280

P_D

1.25

Thermal Resistance from Junction to Ambient

Operating and Storage Temperature Range

Maximum lead temperure for soldering purposes ,

1/8”from case for 5 seconds

R_θJA

T_J,T_STG

100

℃/W

-55 ~+150

℃

T_L

260

www.jscj-elec.com

Rev. - 1.1

12 3 4

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