5秒后页面跳转
CFY25-PH PDF预览

CFY25-PH

更新时间: 2024-11-23 13:06:47
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器
页数 文件大小 规格书
6页 162K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

CFY25-PH 技术参数

生命周期:Transferred包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.18
Is Samacsys:N其他特性:LOW NOISE
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:5 V最大漏极电流 (Abs) (ID):0.08 A
最大漏极电流 (ID):0.08 AFET 技术:METAL SEMICONDUCTOR
最高频带:X BANDJESD-30 代码:O-CRDB-F4
JESD-609代码:e3元件数量:1
端子数量:4工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
极性/信道类型:N-CHANNEL功耗环境最大值:0.25 W
最小功率增益 (Gp):8.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

CFY25-PH 数据手册

 浏览型号CFY25-PH的Datasheet PDF文件第2页浏览型号CFY25-PH的Datasheet PDF文件第3页浏览型号CFY25-PH的Datasheet PDF文件第4页浏览型号CFY25-PH的Datasheet PDF文件第5页浏览型号CFY25-PH的Datasheet PDF文件第6页 
GaAs FET  
CFY 25  
Low noise  
High gain  
For front-end amplifiers  
lon-implanted planar structure  
All gold metallization  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Micro-X  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
4
CFY 25-17  
CFY 25-20  
CFY 25-23  
C 5  
C 6  
C 7  
Q62703-F106  
Q62703-F107  
Q62703-F108  
D
S
G
S
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain-source voltage  
Drain-gate voltage  
V
DS  
DG  
GS  
5
V
V
V
7
Gate-source voltage  
Drain current  
– 5 … + 0  
80  
ID  
mA  
mW  
˚C  
Total power dissipation, TS 56 ˚C2)  
Channel temperature  
Storage temperature range  
P
tot  
250  
T
ch  
150  
Tstg  
– 65 … + 150  
Thermal Resistance  
Channel - soldering point2)  
Rth chS  
375  
K/W  
1)  
For detailed information see chapter Package Outlines.  
TS is measured on the source lead at the soldering point to the pcb.  
2)  
07.94  
Semiconductor Group  
1

与CFY25-PH相关器件

型号 品牌 获取价格 描述 数据表
CFY25-PS INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
CFY27 INFINEON

获取价格

HiRel Ku-Band GaAs General Purpose MESFET
CFY27-38 INFINEON

获取价格

HiRel Ku-Band GaAs General Purpose MESFET
CFY27-38ES INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
CFY27-38H INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
CFY27-38P INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
CFY27-38S INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
CFY27-P INFINEON

获取价格

HiRel Ku-Band GaAs General Purpose MESFET
CFY27-PH INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
CFY27-PS INFINEON

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,