生命周期: | Transferred | 包装说明: | DISK BUTTON, O-CRDB-F4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.25 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 9 V | 最大漏极电流 (Abs) (ID): | 0.42 A |
最大漏极电流 (ID): | 0.42 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | KU BAND | JESD-30 代码: | O-CRDB-F4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.9 W |
最小功率增益 (Gp): | 7.5 dB | 认证状态: | Not Qualified |
参考标准: | ESA-SCC-5613/008 | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CFY27-38H | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CFY27-38P | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CFY27-38S | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CFY27-P | INFINEON |
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HiRel Ku-Band GaAs General Purpose MESFET | |
CFY27-PH | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CFY27-PS | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CFY30 | INFINEON |
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GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) | |
CFY30E6327 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, J | |
CFY35 | INFINEON |
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GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) | |
CFY35/20E6327 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, J |