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CFY27-38S PDF预览

CFY27-38S

更新时间: 2024-11-19 13:06:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数 文件大小 规格书
8页 532K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

CFY27-38S 技术参数

生命周期:Transferred包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:9 V
最大漏极电流 (Abs) (ID):0.42 A最大漏极电流 (ID):0.42 A
FET 技术:METAL SEMICONDUCTOR最高频带:KU BAND
JESD-30 代码:O-CRDB-F4JESD-609代码:e3
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:N-CHANNEL
功耗环境最大值:0.9 W最小功率增益 (Gp):7.5 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

CFY27-38S 数据手册

 浏览型号CFY27-38S的Datasheet PDF文件第2页浏览型号CFY27-38S的Datasheet PDF文件第3页浏览型号CFY27-38S的Datasheet PDF文件第4页浏览型号CFY27-38S的Datasheet PDF文件第5页浏览型号CFY27-38S的Datasheet PDF文件第6页浏览型号CFY27-38S的Datasheet PDF文件第7页 
CFY27  
HiRel Ku-Band GaAs General Purpos e MESFET  
HiRel Dis crete and Microwave Semiconductor  
4
3
2
For professional pre- and driver-amplifiers  
For frequencies from 500 MHz to 20 GHz  
Hermetically sealed microwave package  
1
High gain, medium power  
Component Under Development  
Space Qualification Expected 1998  
ESA/SCC Detail Spec. No.: 5613/008,  
Type Variant No.s 06 and 07 foreseen (tbc.)  
ESD: Electros tatic discharge sensitive device, observe handling precautions!  
Type  
Marking Ordering Code Pin Configuration  
Package  
1
2
3
4
CFY27-38 (ql)  
CFY27-P (ql)  
-
see below  
G
S
D
S
Micro-X  
CFY27-nnl: specifies gain and output power levels (see electrical characteristics)  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Q62703F121  
on request  
on request  
on request  
ES: ESA Space Quality,  
(see order instructions for ordering example)  
S e miconductor Group  
1 of 9  
Dra ft D, S e pte mbe r 99  

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