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CDDFN10-0506N_12 PDF预览

CDDFN10-0506N_12

更新时间： 2024-11-18 12:55:47
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管电视
页数 文件大小 规格书
5页 395K
描述
TVS/Steering Diode Array

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中文翻译

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CDDFN10-0506N_12 数据手册

 浏览型号CDDFN10-0506N_12的Datasheet PDF文件第2页浏览型号CDDFN10-0506N_12的Datasheet PDF文件第3页浏览型号CDDFN10-0506N_12的Datasheet PDF文件第4页浏览型号CDDFN10-0506N_12的Datasheet PDF文件第5页 
Features  
■ Low capacitance - 0.3 pF  
■ ESD protection  
Applications  
■ USB 3.0  
■ HDMI 1.4  
■ Vcc + six I/O data lines  
■ RoHS compliant*  
■ High speed port protection  
■ Portable electronics  
CDDFN10-0506N - TVS/Steering Diode Array  
General Information  
®
The Bourns Model CDDFN10-0506N device provides ESD and  
EFT protection for high speed data ports meeting IEC 61000-4-2  
(ESD) and IEC 61000-4-4 (EFT) requirements. The Transient  
Voltage Suppressor array, protecting up to six data lines, offers a  
Working Peak Voltage of 5.0 V.  
2
1
4
5
6
7
10  
The DFN-10 package is easy to handle with standard pick and  
place equipment and their flat configuration minimizes roll away.  
9
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)  
A
Parameter  
Peak Pulse Current (t = 8/20 μS)  
Symbol  
Rating  
3.5  
Unit  
A
I
p
pp  
Peak Pulse Current (t = 8/20 μS)  
P
40  
6
W
V
p
pk  
Operating Supply Votage (V - Gnd)  
V
dd  
DC  
DC Voltage on any I/O Pad  
Storage Temperature  
Operating Temperature  
V
(Gnd -0.5) to (V +0.5)  
V
ºC  
ºC  
IO  
dd  
T
STG  
-55 to +150  
-40 to +85  
T
OPR  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Working Peak Voltage  
Symbol  
Min.  
Typ.  
Max.  
5.0  
Unit  
V
1
V
WM  
1
Breakdown Voltage @ 1 mA  
V
6.0  
V
BR  
2
Forward Voltage @ 15 mA  
V
0.8  
1.2  
2.5  
1
V
F
1
Leakage Current @ V  
Leakage Current @ V  
I
μA  
μA  
pF  
WM  
L
3
I
WM  
3
IO  
Channel Capacitance @ 2.5 V, 1 MHz  
Channel to Channel Capacitance  
C
0.25  
0.05  
0.35  
IO  
4
C
0.07  
pF  
CROSS  
@ 2.5 V, 1 MHz  
ESD Protection per IEC 61000-4-2  
Contact Discharge  
8
kV  
kV  
Ω
Ω
A
Air Discharge  
15  
5
ESD Dynamic Turn-on Resistance  
R
0.35  
0.2  
dynamic_I/O  
6
ESD Dynamic Turn-on Resistance  
R
dynamic_VDD  
EFT Protection per IEC 61000-4-4 @ 5/50 ns  
40  
Note 1: Pin 2 to Pin 9  
Note 4: Between I/O 1, 4, 5, 6, 7 or 10.  
Note 5: Any I/O Pin to Ground.  
Note 2: Pin 9 to Pin 2.  
Note 3: Pin 1, 4, 5, 6, 7 or 10 to Ground.  
Note 6: V Pin to Ground.  
DD  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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