Datasheet > CDDFN6-0504P

CDDFN6-0504P

更新时间： 2024-01-25 09:54:32

品牌	Logo	应用领域
伯恩斯 - BOURNS		二极管电视
页数	文件大小	规格书
4页	269K
描述
TVS/Steering Diode Array

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数据手册

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CDDFN6-0504P 数据手册

Features

Applications

■ Lead free as standard

■ RoHS compliant*

■ USB 2.0 & USB OTG

■ Multimedia card interface

■ SD card interface

■ SIM ports

■ Low capacitance - 1.2 pF

■ No insertion loss to 2 GHz

■ ESD, EFT, surge protection

■ Gigabit Ethernet

CDDFN6-0504P - TVS/Steering Diode Array

General Information

The CDDFN6-0504P device provides ESD, EFT and surge protection for high speed data

ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge)

requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a

Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V.

The molded packaged device will mount directly onto the industry standard DFN6 or QFN6

footprint. Bourns^®Chip Diodes are easy to handle with standard pick and place equipment

and their ﬂat conﬁguration minimizes roll away.

GND

Absolute Maximum Ratings

Parameter

Symbol

CDDFN6-0504P

Unit

Peak Pulse Power (t = 8/20 µs) ^{(NOTE 1)}

Peak Pulse Current (t = 8/20 µs) ^{(NOTE 1)}

150

6.5

Storage Temperature

-55 to +150

-55 to +125

ºC

STG

OPR

Operating Temperature

Operating Supply Voltage

VDC

ESD per IEC 61000-4-2 (Air)(I/O to GND)

ESD per IEC 61000-4-2 (Contact) (I/O to GND)

ESD_IO

ESD per IEC 61000-4-2 (Air)(V

ESD per IEC 61000-4-2 (Contact)(V

to GND)

ESD_VCC

to GND)

DC Voltage at any I/O Pin

(GND-0.5) to (V +0.5)

Note 1. See Power Derating Curve.

Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CDDFN6-0504P

Unit

Maximum Reverse Standoff Voltage

5.0

RWM

Maximum Leakage Current @ V

5.0

1.0

µA

RWM

Maximum Channel Leakage Current @ V

RWM

Minimum Reverse Breakdown Voltage

@ I =1 mA

6.0

Maximum Forward Voltage @ I = 15 mA

1.0

8.1

Typical Clamping Voltage

Typical ESD Clamping Voltage -

I/O per IEC 61000-4-2 +6 kV, Contact

12.5

9.0

clamp_io

Typical ESD Clamping Voltage-V

clamp_VCC

Maximum Channel Input Capacitance

@ V =5 V, V =0 V, V =2.5 V, f=1 MHz

1.6

PIN5

PIN2

Maximum Channel to Channel Input

Capacitance @ V

=5 V, V

=0 V,

0.14

PIN5

PIN2

CROSS

=2.5 V, f=1 MHz

Maximum Variation of Channel Input

Capacitance @ V =5 V, V =0 V, V =2.5

V, f=1 MHz. (I/O Pin to GND)

ΔC

0.06

PIN2

PIN5

Note 1. Pin 5 to Pin 2 (ground).

Note 2. Pin 1, 3, 4 or 6 to Pin 2 (ground).

Note 3. Between any two of pins 1, 3, 4, 6.

Note 4. Pin 2 (ground) to Pin 5.

*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

12 3 4

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