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CDDFN10-0516P

更新时间： 2024-02-26 14:29:03
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管
页数 文件大小 规格书
6页 370K
描述
Trans Voltage Suppressor Diode,

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CDDFN10-0516P 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ActiveReach Compliance Code：compliant
Factory Lead Time：14 weeks风险等级：1.76
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CDDFN10-0516P 数据手册

 浏览型号CDDFN10-0516P的Datasheet PDF文件第2页浏览型号CDDFN10-0516P的Datasheet PDF文件第3页浏览型号CDDFN10-0516P的Datasheet PDF文件第4页浏览型号CDDFN10-0516P的Datasheet PDF文件第5页浏览型号CDDFN10-0516P的Datasheet PDF文件第6页 
Features  
nꢀ RoHSꢀcompliant*  
Applications  
nꢀ USBꢀ3.1  
nꢀ Lowꢀcapacitanceꢀ-ꢀ0.02ꢀpFꢀ(I/OꢀtoꢀI/O)  
nꢀꢀESDꢀprotectionꢀtoꢀIECꢀ61000-4-2ꢀ(Levelꢀ4)  
nꢀ USBꢀ3.0  
ꢀꢀCDDFN10-0516Pꢀ-ꢀSurfaceꢀMountꢀTVSꢀDiodeꢀArray  
General Information  
The CDDFN10-0516P device provides ESD protection for high-  
speed data ports, meeting IEC 61000-4-2 (Level 4) requirements.  
The Transient Voltage Suppressor array, protecting up to six data  
lines, offers Working Peak Reverse Voltages of 5 V (one line),  
3.3 V (two lines) and 2.2 V (four lines) compatible with USB 3.1.  
2
9
5 V  
3.3 V  
2.2 V  
1
10  
4
5
6
7
The DFN10 packaged device has an ultra-low typical capacitance  
of only 0.02 pF between I/O lines. This allows it to be used for  
protecting sensitive components used on high-speed interfaces.  
The small footprint of the device allows for flow-through routing  
on the PCB, helping to maintain matched impedances of the  
high-speed data lines.  
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CDDFN10-0516P  
Unit  
A
(1)  
Peak Pulse Current (t = 8/20 μS)  
I
4
10  
p
pp  
ESD (per IEC 61000-4-2 Contact)  
ESD (per IEC 61000-4-2 Air)  
Operating Temperature  
kV  
kV  
ºC  
ºC  
15  
T
-40 to +85  
-55 to +150  
J
Storage Temperature  
T
STG  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Pin 2 (V  
) to Ground  
BUS  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Working Peak Reverse Voltage  
Breakdown Voltage @ 1 mA  
Snap-back Voltage @ 50 mA  
V
5
V
V
WM_BUS  
V
6
BR_BUS  
SB_BUS  
V
C
5.5  
V
Leakage Current @ V  
I
2.5  
22  
μA  
V
WM_BUS  
R_BUS  
Clamping Voltage @ I = 4 A  
PP  
Channel Capacitance @ 0 V, 1 MHz  
V
6.5  
17  
C_BUS  
pF  
IN_BUS  
Pin 1 or 10 (D+, D-) to Ground (Unless Otherwise Noted)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Working Peak Reverse Voltage  
Breakdown Voltage @ 1 mA  
Snap-back Voltage @ 50 mA  
V
3.3  
WM_USB  
V
4.5  
3.6  
V
BR_USB  
SB_USB  
V
V
Leakage Current @ V  
I
1
μA  
V
WM_USB  
R_USB  
Forward Voltage @ 15 mA  
V
0.9  
7.2  
F_USB  
C_USB  
IN_USB  
Clamping Voltage @ I = 4 A  
PP  
V
V
Channel Capacitance @ 1.65 V, 1 MHz  
Channel to Channel Capacitance  
C
0.35  
0.5  
pF  
C
0.02  
0.04  
pF  
CROSS_USB  
(2) (3)  
@ 1.65 V, 1 MHz  
Note 1: Pin 2 (V  
Note 2: Between Pins 1 and 10 (D+ to D-)  
Note 3: Pin 9 = 0 V  
to Ground  
(Continued on next page)  
BUS)  
*RoHSꢀDirectiveꢀ2002/95/ECꢀJan.ꢀ27,ꢀ2003ꢀincludingꢀannexꢀandꢀRoHSꢀRecastꢀ2011/65/EUꢀJuneꢀ8,ꢀ2011.ꢀ  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.  
Theꢀdeviceꢀcharacteristicsꢀandꢀparametersꢀinꢀthisꢀdataꢀsheetꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀdeviceꢀperformanceꢀmayꢀvaryꢀoverꢀtime.  
Usersꢀshouldꢀverifyꢀactualꢀdeviceꢀperformanceꢀinꢀtheirꢀspecificꢀapplications.  
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