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CDDFN10-3304NA

更新时间： 2024-11-18 20:05:07
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管
页数 文件大小 规格书
5页 477K
描述
Trans Voltage Suppressor Diode,

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中文翻译

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CDDFN10-3304NA 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50Factory Lead Time：14 weeks
风险等级：1.73二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

CDDFN10-3304NA 数据手册

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Features  
Applications  
n Working voltage 3.3 V  
n SMT - DFN package  
n Low capacitance - 4 pF  
n IEC 61000-4-2 (ESD)  
n IEC 61000-4-4 (EFT)  
n IEC 61000-4-5 (Surge)  
n FireWire, T1/E1, T3/E3 chip side protection  
n Digital Visual Interface (DVI)  
n Ethernet 10/100/1000 Base T  
n High speed port protection  
n Portable electronics  
CDDFN10-3304NAꢀ-ꢀTVS/SteeringꢀDiodeꢀArray  
General Information  
The CDDFN10-3304NA device provides ESD, EFT and Surge protection for high speed  
data ports, assisting compliance with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and  
IEC 61000-4-5 (Surge) requirements. The Transient Voltage Suppressor array, protecting  
up to 4 data lines, offers a Working Peak Voltage of 3.3 V.  
Pin  
5
Pin  
1
Pin  
3
Pin  
7
Pin  
9
The DFN-10 packaged device will mount directly onto the industry standard DFN-10  
footprint. Bourns® Chip Diodes are easy to handle with standard pick and place  
equipment.  
GND  
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)  
A
Parameter  
Symbol  
CDDFN10-3304NA  
Unit  
Peak Pulse Current (t = 8/20 µs)  
p
per IEC 61000-4-5  
I
25  
A
PP  
ESD Protection per IEC 61000-4-2  
Contact Discharge  
Air Discharge  
kV  
kV  
±30  
±30  
EFT Protection per IEC 61000-4-4 @ 5/50 ns  
Storage Temperature  
40  
A
T
-55 to +150  
-55 to +125  
ºC  
ºC  
STG  
Operating Temperature  
T
OPR  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Breakdown Voltage @ 1 mA  
V
3.9  
V
BR  
Reverse Working Peak Voltage  
1
V
3.3  
1
V
µA  
V
RWM  
Leakage Current @ V  
2
I
D
RWM  
Clamping Voltage @ I = 5 A 8/20 µs  
P
V
V
V
C
12  
15  
18  
4.6  
C
C
C
D
2
Clamping Voltage @ I = 15 A 8/20 µs  
P
V
2
Clamping Voltage @ I = 25 A 8/20 µs  
P
V
2
Junction Capacitance @ 0 V 1 MHz  
4.0  
1.5  
pF  
3
Junction Capacitance @ 0 V 1 MHz  
C
2.3  
pF  
IO  
Note 1: Pin 5 to ground.  
Note 2: Pin 1,3,7 or 9 to ground.  
Note 3: Between Pin 1,3,7 and 9.  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Users should verify actual device performance in their specific applications.  
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at www.bourns.com/legal/disclaimer.pdf.  
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