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CDDFN4-T05C PDF预览

CDDFN4-T05C

更新时间: 2024-01-16 23:53:23
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
4页 341K
描述
Trans Voltage Suppressor Diode, 25W, 5V V(RWM), Bidirectional, 4 Element, Silicon, 1.00 X 1.00 MM, ROHS COMPLIANT, DFN-4

CDDFN4-T05C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFN包装说明:R-PDSO-N4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.84最小击穿电压:6 V
配置:SEPARATE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-N4
JESD-609代码:e4湿度敏感等级:1
最大非重复峰值反向功率耗散:25 W元件数量:4
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:NICKEL PALLADIUM GOLD
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDDFN4-T05C 数据手册

 浏览型号CDDFN4-T05C的Datasheet PDF文件第2页浏览型号CDDFN4-T05C的Datasheet PDF文件第3页浏览型号CDDFN4-T05C的Datasheet PDF文件第4页 
Features  
Applications  
RoHS compliant*  
Personal Digital Assistants (PDAs)  
Mobile Phones & Accessories  
Memory Card Protection  
SIM Card Port Protection  
Portable Electronics  
Protects 3 bidirectional or 4 unidirectional  
lines  
ESD protection >25k V  
CDDFN4-T05 – Surface Mount TVS Diode Array  
General Information  
The CDDFN4-T05 device provides ESD protection for external  
ports meeting IEC 61000-4-2 Level 4 ESD and IEC 61000-4-4 EFT  
requirements. The Transient Voltage Suppressor Array, protecting  
up to 4 data lines, offers a Working Peak Reverse Voltage of 5 V  
and Minimum Breakdown Voltage of 6 V.  
The low profile 0.50 mm DFN-4 device measures 1.00 mm x 1.00 mm  
and is easy to handle with standard pick and place equipment and  
the flat configuration minimizes roll away.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
PPP  
Value  
25  
Unit  
W
NOTE 1  
Peak Pulse Power (tp = 8/20 µs)  
Junction Temperature  
Storage Temperature  
Operating Temperature  
TJ  
150  
˚C  
TSTG  
TOPR  
-55 ˚C to +150 ˚C  
-40 ˚C to +85 ˚C  
˚C  
˚C  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
VBR  
VWM  
ID  
Value  
6
Unit  
V
Minimum Breakdown Voltage @ 1 mA  
Maximum Working Peak Voltage  
Maximum Leakage Current @ VWM = 3 V  
Maximum Clamping Voltage @ IPP = 2 A  
Typical Forward Voltage @ 10 mA  
Typical Junction Capacitance @ 0 V, 1 MHz  
Typical Junction Capacitance @ 2.5 V, 1 MHz  
5
V
0.1  
12  
µA  
V
VC  
VF  
1.0  
10.5  
7.0  
V
CD  
pF  
pF  
CD  
ESD Protection: Per IEC 61000-4-2 Standard  
Minimum Contact Discharge  
Minimum Air Discharge  
8
15  
kV  
kV  
EFT Protection: Per IEC61000-4-4: Standard  
Maximum @ 5/50 ns  
40  
A
Notes:  
1. See Peak Pulse Power vs. Pulse Time.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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