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CDDFN10-0524P_12 PDF预览

CDDFN10-0524P_12

更新时间： 2024-11-18 12:55:47
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管电视
页数 文件大小 规格书
4页 335K
描述
Surface Mount TVS Diode Array

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CDDFN10-0524P_12 数据手册

 浏览型号CDDFN10-0524P_12的Datasheet PDF文件第2页浏览型号CDDFN10-0524P_12的Datasheet PDF文件第3页浏览型号CDDFN10-0524P_12的Datasheet PDF文件第4页 
Features  
Applications  
■ RoHS compliant*  
■ Low capacitance - 0.5 pF  
■ ESD protection >15 kV  
■ HDMI 1.4  
■ Digital Visual Interface (DVI)  
■ USB 3.0 / USB OTG  
■ Memory protection  
■ SIM card ports  
CDDFN10-0524P - Surface Mount TVS Diode Array  
General Information  
The CDDFN10-0524P device provides ESD, EFT and Surge protection for high-  
speed data ports meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage  
Suppressor array, protecting up to 4 data lines, offers a Working Peak Reverse Voltage  
of 5 V and Minimum Breakdown Voltage of 6 V.  
Pin  
1
Pin  
2
Pin  
4
Pin  
5
The DFN10 packaged device will mount directly onto the industry standard DFN10  
®
footprint. Bourns Chip Diodes conform to JEDEC standards, are easy to handle with  
standard pick and place equipment and their flat configuration minimizes roll away.  
Pins  
3, 8  
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CDDFN10-0524P  
Unit  
W
Peak Pulse Power (t = 8/20 μS)  
P
30  
3.8  
6
p
pp  
pp  
Peak Pulse Current (t = 8/20 μS)  
I
A
p
Operating Voltage (I/O pin - GND)  
Storage Temperature  
V
V
ºC  
ºC  
DC  
T
-55 to +150  
-55 to +85  
STG  
Operating Temperature  
T
OPR  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
V
Breakdown Voltage @ 1 mA  
Reverse Standoff Voltage  
V
6
BR  
RWM  
V
5
Forward Voltage If =15 mA  
V
0.9  
1.1  
V
F
(Gnd to I/O Pin)  
Channel Leakage Current  
I
1.5  
μA  
D
V
= 5 V, (I/O Pin to Gnd)  
RWM  
Clamping Voltage  
IEC 61000-4-2 +6 kV,  
Contact mode (I/O Pin to Gnd)  
V
12  
0.5  
V
C
Channel Input Capacitance  
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ  
(I/O Pin to Gnd)  
C
0.65  
0.08  
pF  
pF  
kV  
IN  
Channel to Channel Input Capacitance  
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ  
(Between I/O pins)  
C
0.04  
CROSS  
ESD Protection per IEC 6-1000-4-2  
Contact Discharge  
8
10  
15  
Air Discharge  
15  
ESD Dynamic Turn-on Resistance  
Ω
A
A
R
0.3  
dynamic  
(any I/O Pin to Gnd)  
EFT Protection per IEC 61000-4-4  
@ 5/50 ns  
40  
Surge Protection per IEC 61000-4-5  
3.8  
@ 8/20 μs  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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