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CAT28F102N-10T PDF预览

CAT28F102N-10T

更新时间: 2024-09-16 20:22:35
品牌 Logo 应用领域
CATALYST 内存集成电路
页数 文件大小 规格书
15页 107K
描述
Flash, 64KX16, 100ns, PQCC44, PLASTIC, LCC-44

CAT28F102N-10T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:LCC包装说明:QCCJ, LDCC44,.7SQ
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:100 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:S-PQCC-J44JESD-609代码:e0
长度:16.5862 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC44,.7SQ封装形状:SQUARE
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
编程电压:12 V认证状态:Not Qualified
座面最大高度:4.57 mm最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:NO
类型:NOR TYPE宽度:16.5862 mm
Base Number Matches:1

CAT28F102N-10T 数据手册

 浏览型号CAT28F102N-10T的Datasheet PDF文件第2页浏览型号CAT28F102N-10T的Datasheet PDF文件第3页浏览型号CAT28F102N-10T的Datasheet PDF文件第4页浏览型号CAT28F102N-10T的Datasheet PDF文件第5页浏览型号CAT28F102N-10T的Datasheet PDF文件第6页浏览型号CAT28F102N-10T的Datasheet PDF文件第7页 
Main Menu  
CAT28F102  
Licensed Intel  
second source  
1 Megabit CMOS Flash Memory  
FEATURES  
64K x 16 Word Organization  
Fast Read Access Time: 100/120 ns  
Stop Timer for Program/Erase  
Low Power CMOS Dissipation:  
–Active: 30 mA max (CMOS/TTL levels)  
–Standby: 1 mA max (TTL levels)  
–Standby: 100 µA max (CMOS levels)  
On-Chip Address and Data Latches  
JEDEC Standard Pinouts:  
–40-pin DIP  
High Speed Programming:  
–10 µs per byte  
–44-pin PLCC  
–40-pin TSOP  
–1 Sec Typ Chip Program  
100,000 Program/Erase Cycles  
10 Year Data Retention  
Electronic Signature  
0.5 Seconds Typical Chip-Erase  
12.0V ± 5% Programming and Erase Voltage  
Commercial,Industrial and Automotive  
Temperature Ranges  
DESCRIPTION  
write cycle scheme. Address and Data are latched to  
free the I/O bus and address bus during the write  
operation.  
TheCAT28F102isahighspeed64Kx16-bitelectrically  
erasable and reprogrammable Flash memory ideally  
suited for applications requiring in-system or after-sale  
code updates. Electrical erasure of the full memory  
contents is achieved typically within 0.5 second.  
The CAT28F102 is manufactured using Catalyst’s  
advancedCMOSfloatinggatetechnology.Itisdesigned  
to endure 100,000 program/erase cycles and has a data  
retention of 10 years. The device is available in JEDEC  
approved 40-pin DIP, 44-pin PLCC, or 40-pin TSOP  
packages.  
It is pin and Read timing compatible with standard  
EPROMandE2PROMdevices.ProgrammingandErase  
areperformedthroughanoperationandverifyalgorithm.  
The instructions are input via the I/O bus, using a two  
I/O –I/O  
BLOCK DIAGRAM  
0
15  
I/O BUFFERS  
ERASE VOLTAGE  
SWITCH  
WE  
DATA  
LATCH  
SENSE  
AMP  
COMMAND  
REGISTER  
PROGRAM VOLTAGE  
SWITCH  
CE, OE LOGIC  
CE  
OE  
Y-GATING  
Y-DECODER  
1,048,576-BIT  
MEMORY  
ARRAY  
A –A  
15  
0
X-DECODER  
VOLTAGE VERIFY  
SWITCH  
Doc. No. 1014, Rev. A  
© 2001 by Catalyst Semiconductor, Inc.  
1
Characteristics subject to change without notice  

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