BYQ30E

更新时间： 2024-11-10 22:09:07

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
8页	66K
描述
Rectifier diodes ultrafast, rugged

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中文翻译

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BYQ30E 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYQ30E, BYQ30EB, BYQ30ED series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V_R= 150 V/ 200 V

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_F≤ 0.95 V

I_O(AV)= 16 A

I_RRM= 0.2 A

t_rr≤ 25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYQ30E series is supplied in the SOT78 conventional leaded package.

The BYQ30EB series is supplied in the SOT404 surface mounting package.

The BYQ30ED series is supplied in the SOT428 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

SOT428

DESCRIPTION

tab

anode 1

cathode ¹

anode 2

1 2 3

tab cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYQ30E/ BYQ30EB/ BYQ30ED

-150

-200

V_RRM

V_RWM

Peak repetitive reverse

150

200

voltage

Working peak reverse

voltage

Continuous reverse voltage

150

200

V_R

I_O(AV)

Average rectified output

current (both diodes

conducting)

Repetitive peak forward

current per diode

square wave; δ = 0.5; T_mb≤ 104 ˚C

I_FRM

I_FSM

Non-repetitive peak forward t = 10 ms

current per diode

t = 8.3 ms

sinusoidal; with reapplied V_RRM(max)

t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

T_j

Peak repetitive reverse

surge current per diode

0.2

Peak non-repetitive reverse t_p= 100 µs

surge current per diode

Operating junction

150

˚C

temperature

Storage temperature

T_stg

- 40

1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.

October 1998

Rev 1.200

12 3 4 5 6 7 8

中文翻译

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