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BYQ28F-200 PDF预览

BYQ28F-200

更新时间: 2024-11-10 22:09:07
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 58K
描述
Rectifier diodes ultrafast, rugged

BYQ28F-200 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
Is Samacsys:N应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:55 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

BYQ28F-200 数据手册

 浏览型号BYQ28F-200的Datasheet PDF文件第2页浏览型号BYQ28F-200的Datasheet PDF文件第3页浏览型号BYQ28F-200的Datasheet PDF文件第4页浏览型号BYQ28F-200的Datasheet PDF文件第5页浏览型号BYQ28F-200的Datasheet PDF文件第6页浏览型号BYQ28F-200的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYQ28F, BYQ28EX series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 150 V/ 200 V  
a1  
1
a2  
3
VF 0.895 V  
IO(AV) = 10 A  
IRRM = 0.2 A  
trr 25 ns  
k
2
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYQ28F series is supplied in the SOT186 package.  
The BYQ28EX series is supplied in the SOT186A package.  
PINNING  
SOT186  
SOT186A  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
case  
case  
1
2
3
anode 2 (a)  
isolated  
1
2
3
1
2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
BYQ28F / BYQ28EX  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
Ths 148˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
-
10  
10  
A
(both diodes conducting)1  
δ = 0.5; Ths 92 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current per diode  
Ths 92 ˚C  
t = 10 ms  
-
-
50  
55  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1 Neglecting switching and reverse current losses  
October 1998  
1
Rev 1.300  

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