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BYG26G PDF预览

BYG26G

更新时间: 2024-11-16 14:53:27
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
3页 178K
描述
Rectifier device Ultra fast recovery rectifier (Trr 35ns)

BYG26G 数据手册

 浏览型号BYG26G的Datasheet PDF文件第2页浏览型号BYG26G的Datasheet PDF文件第3页 
BYG26D - BYG26J  
FAST SILICON MESA SMD RECTIFIER DIODES  
VOLTAGE RANGE: 200 - 600V  
CURRENT: 1.0 A  
Features  
Glass passivated  
High maximum operating temperature  
Ideal for surface mount automotive applications  
Low leakage current  
Excellent stability  
Guaranteed avalanche energy absorption capability  
UL 94V-O classified plastic package  
Shipped in 12 mm embossed tape  
B
SMA(DO-214AC)  
Dim  
MinMax  
A
B
C
D
E
G
H
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
Mechanical Data  
A
J
C
Case: SMA(DO-214AC), Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Mounting Position: Any  
D
Weight: 0.064 grams (approx.)  
G
H
E
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
200  
400  
600  
UNIT  
VRRM  
repetitive peak reverse voltage  
BYG26D  
BYG26G  
BYG26J  
V
V
V
VR  
continuous reverse voltage  
BYG26D  
BYG26G  
BYG26J  
200  
400  
600  
V
V
V
VRMS  
root mean square voltage  
BYG26D  
140  
280  
420  
V
V
V
BYG26G  
BYG26J  
average forward current  
averaged over any 20 ms period;  
Ttp = 85 °C; see Fig.2  
IF(AV)  
IFSM  
1
A
A
non-repetitive peak forward current  
t = 8.3 ms half sine wave;  
Tj = 25 °C prior to surge;  
VR = VRRMmax  
15  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175  
+175  
°C  
°C  
See Fig.3  
1 of 3  
www.sunmate.tw  

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