Datasheet > BYG26J

BYG26J

更新时间： 2023-12-06 20:03:04

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
3页	178K
描述
Rectifier device Ultra fast recovery rectifier (Trr 35ns)

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数据手册

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BYG26J 数据手册

BYG26D - BYG26J

FAST SILICON MESA SMD RECTIFIER DIODES

VOLTAGE RANGE: 200 - 600V

CURRENT: 1.0 A

Features

Glass passivated

High maximum operating temperature

Ideal for surface mount automotive applications

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

UL 94V-O classified plastic package

Shipped in 12 mm embossed tape

SMA(DO-214AC)

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMA(DO-214AC), Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Mounting Position: Any

Weight: 0.064 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

200

400

600

UNIT

V_RRM

repetitive peak reverse voltage

BYG26D

BYG26G

BYG26J

−

V_R

continuous reverse voltage

BYG26D

BYG26G

BYG26J

−

200

400

600

V_RMS

root mean square voltage

BYG26D

−

140

280

420

BYG26G

BYG26J

average forward current

averaged over any 20 ms period;

T_tp= 85 °C; see Fig.2

I_F(AV)

I_FSM

−

non-repetitive peak forward current

t = 8.3 ms half sine wave;

T_j= 25 °C prior to surge;

V_R= V_RRMmax

−

T_stg

T_j

storage temperature

junction temperature

−65

+175

°C

See Fig.3

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