Datasheet > BYG50G

BYG50G

更新时间： 2024-11-16 02:59:23

品牌	Logo	应用领域
圣诺 - SENO		局域网光电二极管
页数	文件大小	规格书
2页	145K
描述
1.0A SURFACE MOUNT RECTIFIER

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中文翻译

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数据手册

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BYG50G 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

BY G50A-BY G50M

1.0A SURFACE MOUNT RECTIFIER

Features

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Surge Overload Rating to 30A Peak

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E

SMA/DO-214AC

Mechanical Data

Dim

Min

2.50

4.00

1.40

0.152

4.80

2.00

0.051

0.76

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

BY G

50A

BY G

50B

BY G

50D

BY G

50G

BY G

50J

BY G

50K

BY G

50M

Unit

Characteristic

Symbo

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current @T_L= 60° C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

C^j

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

R^ꢀ

T^j,T^STG

-55 to +150

°C

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

2. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

BY G50A-BY G50M

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与BYG50G相关器件

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BYG50G/T1	NXP	获取价格	DIODE 400 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SOD-106, 2 PIN, Rectifier Diode
BYG50G/T3	NXP	获取价格	400V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN
BYG50G-T	NXP	获取价格	DIODE SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode
BYG50GT/R	PHILIPS	获取价格	Rectifier Diode, 1 Element, 2.1A, 400V V(RRM),
BYG50GT/R	NXP	获取价格	400V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN
BYG50J	NXP	获取价格	Controlled avalanche rectifiers
BYG50J	TAYCHIPST	获取价格	Controlled avalanche rectifiers
BYG50J	SENO	获取价格	1.0A SURFACE MOUNT RECTIFIER
BYG50J/T3	NXP	获取价格	600V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN
BYG50J-T	NXP	获取价格	DIODE SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode