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BYG24G-M3/TR PDF预览

BYG24G-M3/TR

更新时间: 2024-11-14 15:28:55
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管局域网光电二极管
页数 文件大小 规格书
4页 88K
描述
DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

BYG24G-M3/TR 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:400 V最大反向恢复时间:0.14 µs
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYG24G-M3/TR 数据手册

 浏览型号BYG24G-M3/TR的Datasheet PDF文件第2页浏览型号BYG24G-M3/TR的Datasheet PDF文件第3页浏览型号BYG24G-M3/TR的Datasheet PDF文件第4页 
BYG24D, BYG24G, BYG24J  
www.vishay.com  
Vishay General Semiconductor  
Fast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low reverse current  
• Soft recovery characteristics  
• Fast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive, and telecommunication.  
IF(AV)  
1.5 A  
VRRM  
200 V, 400 V, 600 V  
30 A  
IFSM  
IR  
1.0 μA  
MECHANICAL DATA  
VF  
trr  
1.25 V  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
140 ns  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
ER  
20 mJ  
commercial grade  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...)  
TJ max.  
Package  
Diode variation  
150 °C  
SMA (DO-214AC)  
Single  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG24D  
BYG24D  
200  
BYG24G  
BYG24G  
400  
BYG24J  
BYG24J  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current at TA = 65 °C  
VRRM  
IF(AV)  
V
A
1.5  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Pulse energy in avalanche mode, non repetitive  
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C  
ER  
20  
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 27-Apr-17  
Document Number: 89475  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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