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BYG26G PDF预览

BYG26G

更新时间: 2024-01-02 15:16:31
品牌 Logo 应用领域
台芯 - TAYCHIPST 二极管光电二极管局域网
页数 文件大小 规格书
2页 3968K
描述
SMA ultra fast soft-recovery controlled avalanche rectifiers

BYG26G 技术参数

生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUALBase Number Matches:1

BYG26G 数据手册

 浏览型号BYG26G的Datasheet PDF文件第2页 
BYG26D THRU BYG26J  
SMA ultra fast soft-recovery  
controlled avalanche rectifiers  
200V-600V  
1.0A  
FEATURES  
Glass passivated  
High maximum operating temperature  
Ideal for surface mount automotive applications  
Low leakage current  
Excellent stability  
Guaranteed avalanche energy absorption capability  
UL 94V-O classified plastic package  
Shipped in 12 mm embossed tape  
Marking: cathode, date code, type code  
Easy pick and place.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
LIMITING VALUES  
SYMBOL  
PARAMETER  
repetitive peak reverse voltage  
BYG26D  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
200  
V
V
V
BYG26G  
400  
600  
BYG26J  
VR  
continuous reverse voltage  
BYG26D  
200  
400  
600  
V
V
V
BYG26G  
BYG26J  
VRMS  
root mean square voltage  
BYG26D  
140  
280  
420  
1
V
V
V
A
BYG26G  
BYG26J  
IF(AV)  
IFSM  
average forward current  
averaged over any 20 ms period;  
Ttp = 85 °C; see Fig.2  
non-repetitive peak forward current  
t = 8.3 ms half sine wave;  
Tj = 25 °C prior to surge;  
VR = VRRMmax  
15  
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175  
+175  
°C  
°C  
See Fig.3  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
TYP.  
MAX.  
UNIT  
VF  
IR  
IF = 1 A; see Fig.4  
3.6  
5
V
reverse current  
VR = VRRMmax; see Fig.5  
µA  
µA  
ns  
VR = VRRMmax; Tj = 165 °C; see Fig.5  
100  
30  
trr  
reverse recovery time  
diode capacitance  
when switched from IF = 0.5 A to IR = 1 A;  
measured at IR = 0.25 A; see Fig.9  
Cd  
VR = 4 V; f = 1 MHz; see Fig.6  
7
pF  
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  
1 of 2  

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