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BYG24J PDF预览

BYG24J

更新时间: 2024-11-13 22:28:03
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
3页 69K
描述
Fast Avalanche SMD Rectifier

BYG24J 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.46
Is Samacsys:NBase Number Matches:1

BYG24J 数据手册

 浏览型号BYG24J的Datasheet PDF文件第2页浏览型号BYG24J的Datasheet PDF文件第3页 
BYG24  
Vishay Semiconductors  
Fast Avalanche SMD Rectifier  
Features  
• Glass passivated junction  
• Low reverse current  
• Soft recovery characteristics  
• Fast reverse recovery time  
• Wave and reflow solderable  
15811  
Applications  
Freewheeling diodes in SMPS and converters  
Snubber diodes  
Parts Table  
Part  
Type differentiation  
VR = 200 V @ IFAV = 1.5 A  
Package  
BYG 24 D  
BYG 24 G  
BYG 24 J  
DO-214AC  
V
V
R = 400 V @ IFAV = 1.5 A  
R = 600 V @ IFAV = 1.5 A  
DO-214AC  
DO-214AC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
BYG 24 D  
VR = VRRM  
BYG 24 G  
BYG 24 J  
VR = VRRM  
400  
600  
V
V
V
R = VRRM  
IFSM  
Peak forward surge current  
Average forward current  
tp = 10 ms, half-sinewave  
30  
A
IFAV  
1.5  
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 150  
°C  
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 25 °C  
ER  
20  
mJ  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction case  
Test condition  
Part  
Symbol  
RthJC  
Value  
25  
Unit  
K/W  
Junction ambient  
epoxy glass hard tissue 35 µm *  
17 mm2 cooper area per  
electrode  
RthJA  
150  
K/W  
epoxy glass hard tissue 35  
RthJA  
125  
K/W  
&muMm * 50 mm2 cooper area  
per electrode  
Document Number 86067  
Rev. 1.2, 19-Oct-04  
www.vishay.com  
1

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