Datasheet > BYG23MR3

BYG23MR3

更新时间： 2024-11-15 01:15:31

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TSC		/
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描述
High Efficient Surface Mount Rectifiers

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BYG23MR3 数据手册

BYG23M

Taiwan Semiconductor

CREAT BY ART

High Efficient Surface Mount Rectifiers

FEATURES

- Glass passivated junction chip.

- Ideal for automated placement

- Fast switching for high efficiency

- High surge current capability

- Moisture sensitivity level: level 1, per J-STD-020

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

- AEC-Q101 available

TYPICAL APPLICATION

DO-214AC (SMA)

The superior avalanche capability of BYG23M is specially

suited for free-wheeling, clamping, snubbering,

demagnetization in power supplies and other power switching applications.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: Indicated by cathode band

Weight: 0.064 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25°C unless otherwise noted)

PARAMETER

SYMBOL

BYG23M

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

1000

700

Maximum DC blocking voltage

1000

1.5

Maximum average forward rectified current (@T_A=65°C)

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Maximum instantaneous forward voltage (Note 1)

@ 1 A

V_F

1.7

Maximum reverse current @ rated VR T_J=25°C

I_R

T_J=100°C

T_J=125°C

μA

Pulse energy in avalanche mode, non repetitive

(Inductive load switch off ) T_A=25℃, I_(BR)R=1.23A

E_RSM

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

t_rr

C_J

^OC/W

^OC

R_θJA

T_J

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.

Document Number: DS_D1411087

Version: B14

12 3 4

中文翻译

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