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BYG23MR3G PDF预览

BYG23MR3G

更新时间: 2024-02-22 02:31:52
品牌 Logo 应用领域
TSC 功效光电二极管
页数 文件大小 规格书
4页 382K
描述
High Efficient Surface Mount Rectifiers

BYG23MR3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68其他特性:FREE WHEELING DIODE
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
参考标准:AEC-Q101最大重复峰值反向电压:1000 V
最大反向电流:1 µA最大反向恢复时间:0.065 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYG23MR3G 数据手册

 浏览型号BYG23MR3G的Datasheet PDF文件第2页浏览型号BYG23MR3G的Datasheet PDF文件第3页浏览型号BYG23MR3G的Datasheet PDF文件第4页 
BYG23M  
Taiwan Semiconductor  
CREAT BY ART  
High Efficient Surface Mount Rectifiers  
FEATURES  
- Glass passivated junction chip.  
- Ideal for automated placement  
- Fast switching for high efficiency  
- High surge current capability  
- Moisture sensitivity level: level 1, per J-STD-020  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
- AEC-Q101 available  
TYPICAL APPLICATION  
DO-214AC (SMA)  
The superior avalanche capability of BYG23M is specially  
suited for free-wheeling, clamping, snubbering,  
demagnetization in power supplies and other power switching applications.  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.064 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG23M  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
1000  
1.5  
Maximum average forward rectified current (@TA=65°C)  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 1 A  
VF  
1.7  
1
Maximum reverse current @ rated VR TJ=25°C  
IR  
TJ=100°C  
TJ=125°C  
15  
50  
μA  
Pulse energy in avalanche mode, non repetitive  
(Inductive load switch off ) TA=25, I(BR)R =1.23A  
ERSM  
30  
mJ  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical thermal resistance  
trr  
CJ  
65  
15  
ns  
pF  
OC/W  
OC  
RθJA  
TJ  
70  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
OC  
TSTG  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.  
Document Number: DS_D1411087  
Version: B14  

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