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BYG24D PDF预览

BYG24D

更新时间: 2024-01-18 05:45:51
品牌 Logo 应用领域
台芯 - TAYCHIPST /
页数 文件大小 规格书
2页 3950K
描述
Fast Avalanche SMD Rectifier

BYG24D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliant风险等级:5.75
应用:FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:TS 16949
最大重复峰值反向电压:600 V最大反向电流:1 µA
最大反向恢复时间:0.14 µs表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYG24D 数据手册

 浏览型号BYG24D的Datasheet PDF文件第2页 
BYG24D THRU BYG24J  
200V-600V  
1.5A  
Fast Avalanche SMD Rectifier  
FEATURES  
• Glass passivated junction  
• Low reverse current  
• Soft recovery characteristics  
• Fast reverse recovery time  
• Wave and reflow solderable  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings  
Parameter  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
Reverse voltage = Repetitive  
peak reverse voltage  
BYG 24 D  
VR = VRRM  
V
BYG 24 G  
BYG 24 J  
VR = VRRM  
400  
600  
V
V
V
R = VRRM  
IFSM  
Peak forward surge current  
Average forward current  
tp = 10 ms, half-sinewave  
30  
A
IFAV  
1.5  
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 150  
°C  
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 25 °C  
ER  
20  
mJ  
Maximum Thermal Resistance  
Parameter  
Junction case  
Junction ambient  
Test condition  
Part  
Symbol  
RthJC  
Value  
25  
Unit  
K/W  
epoxy glass hard tissue 35 µm *  
17 mm2 cooper area per  
electrode  
RthJA  
150  
K/W  
epoxy glass hard tissue 35  
RthJA  
125  
K/W  
&muMm * 50 mm2 cooper area  
per electrode  
Electrical Characteristics  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Max  
Unit  
Forward voltage  
Reverse current  
Breakdown voltage  
IF = 1 A  
VF  
VF  
1.15  
1.25  
1
V
V
IF = 1.5 A  
VR = VRRM  
IR  
µA  
µA  
V
VR = VRRM, Tj = 100 °C  
IR = 100 µA  
IR  
10  
BYG 24 D  
V(BR)R  
V(BR)R  
V(BR)R  
trr  
200  
400  
600  
BYG 24 G  
BYG 24 J  
V
V
Reverse recovery time  
IF = 0.5 A; IR = 1 A; iR = 0.25 A  
140  
ns  
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  
1 of 2  

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