Datasheet > BYG24G

BYG24G

更新时间： 2024-11-14 12:50:35

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管光电二极管局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
2页	3950K
描述
Fast Avalanche SMD Rectifier

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中文翻译

获取价格

数据手册

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BYG24G 数据手册

BYG24D THRU BYG24J

200V-600V

1.5A

Fast Avalanche SMD Rectifier

FEATURES

• Glass passivated junction

• Low reverse current

• Soft recovery characteristics

• Fast reverse recovery time

• Wave and reflow solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Test condition

Part

Symbol

Value

200

Unit

Reverse voltage = Repetitive

peak reverse voltage

BYG 24 D

V_R= V_RRM

BYG 24 G

BYG 24 J

V_R= V_RRM

400

600

_R= V_RRM

I_FSM

Peak forward surge current

Average forward current

t_p= 10 ms, half-sinewave

I_FAV

1.5

Junction and storage

temperature range

T_j= T_stg

- 55 to + 150

°C

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

_(BR)R= 1 A, T_j= 25 °C

E_R

Maximum Thermal Resistance

Parameter

Junction case

Junction ambient

Test condition

Part

Symbol

R_thJC

Value

Unit

K/W

epoxy glass hard tissue 35 µm *

17 mm²cooper area per

electrode

R_thJA

150

K/W

epoxy glass hard tissue 35

R_thJA

125

K/W

&muMm * 50 mm²cooper area

per electrode

Electrical Characteristics

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

Reverse current

Breakdown voltage

I_F= 1 A

V_F

1.15

1.25

I_F= 1.5 A

V_R= V_RRM

I_R

µA

V_R= V_RRM, T_j= 100 °C

I_R= 100 µA

I_R

BYG 24 D

V_(BR)R

t_rr

200

400

600

BYG 24 G

BYG 24 J

Reverse recovery time

I_F= 0.5 A; I_R= 1 A; i_R= 0.25 A

140

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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中文翻译

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