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BYG24D-HM3 PDF预览

BYG24D-HM3

更新时间: 2024-02-10 00:25:06
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 102K
描述
Fast Avalanche SMD Rectifier

BYG24D-HM3 数据手册

 浏览型号BYG24D-HM3的Datasheet PDF文件第2页浏览型号BYG24D-HM3的Datasheet PDF文件第3页浏览型号BYG24D-HM3的Datasheet PDF文件第4页 
BYG24D-M3/HM3, BYG24G-M3/HM3, BYG24J-M3/HM3  
www.vishay.com  
Vishay General Semiconductor  
Fast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low reverse current  
• Soft recovery characteristics  
• Fast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive, and telecommunication.  
IF(AV)  
1.5 A  
VRRM  
200 V, 400 V, 600 V  
30 A  
IFSM  
IR  
1.0 μA  
MECHANICAL DATA  
VF  
trr  
1.25 V  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
140 ns  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
ER  
20 mJ  
TJ max.  
Package  
Diode variation  
150 °C  
-
halogen-free, RoHS-compliant, and  
DO-214AC (SMA)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG24D  
BYG24D  
200  
BYG24G  
BYG24G  
400  
BYG24J  
BYG24J  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current at TA = 65 °C  
VRRM  
IF(AV)  
V
A
1.5  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Pulse energy in avalanche mode, non repetitive  
ER  
20  
mJ  
°C  
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 23-Feb-16  
Document Number: 89475  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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