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BYG24G-E3/TR PDF预览

BYG24G-E3/TR

更新时间: 2024-11-14 14:29:27
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威世 - VISHAY /
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4页 89K
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BYG24G-E3/TR 数据手册

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BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3  
www.vishay.com  
Vishay General Semiconductor  
Fast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated junction  
• Low reverse current  
• Soft recovery characteristics  
• Fast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
VRRM  
200 V, 400 V, 600 V  
30 A  
IFSM  
MECHANICAL DATA  
IR  
1.0 μA  
Case: SMA (DO-214AC)  
VF  
trr  
1.25 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,...)  
140 ns  
ER  
20 mJ  
TJ max.  
Package  
Diode variation  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
SMA (DO-214AC)  
Single  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG24D  
BYG24D  
200  
BYG24G  
BYG24J  
BYG24J  
600  
UNIT  
Device marking code  
BYG24G  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
400  
1.5  
V
A
Average forward current at TA = 65 °C  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Pulse energy in avalanche mode, non repetitive  
ER  
20  
mJ  
°C  
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 08-Mar-17  
Document Number: 88960  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BYG24G-E3/TR 替代型号

型号 品牌 替代类型 描述 数据表
BYG24GHE3/TR VISHAY

完全替代

DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA,
BYG24G-E3/TR3 VISHAY

完全替代

DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA,

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