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BYG23M_14

更新时间： 2024-11-15 01:15:31
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页数 文件大小 规格书
4页 382K
描述
High Efficient Surface Mount Rectifiers

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BYG23M_14 数据手册

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BYG23M  
Taiwan Semiconductor  
CREAT BY ART  
High Efficient Surface Mount Rectifiers  
FEATURES  
- Glass passivated junction chip.  
- Ideal for automated placement  
- Fast switching for high efficiency  
- High surge current capability  
- Moisture sensitivity level: level 1, per J-STD-020  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
- AEC-Q101 available  
TYPICAL APPLICATION  
DO-214AC (SMA)  
The superior avalanche capability of BYG23M is specially  
suited for free-wheeling, clamping, snubbering,  
demagnetization in power supplies and other power switching applications.  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.064 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG23M  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
1000  
1.5  
Maximum average forward rectified current (@TA=65°C)  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 1 A  
VF  
1.7  
1
Maximum reverse current @ rated VR TJ=25°C  
IR  
TJ=100°C  
TJ=125°C  
15  
50  
μA  
Pulse energy in avalanche mode, non repetitive  
(Inductive load switch off ) TA=25℃, I(BR)R =1.23A  
ERSM  
30  
mJ  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical thermal resistance  
trr  
CJ  
65  
15  
ns  
pF  
OC/W  
OC  
RθJA  
TJ  
70  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
OC  
TSTG  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.  
Document Number: DS_D1411087  
Version: B14  
1234

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