Datasheet > BYG23M-HE3/TR3

BYG23M-HE3/TR3

更新时间： 2024-01-08 19:00:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	84K
描述
DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode

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技术参数
数据手册

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BYG23M-HE3/TR3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

BYG23M-HE3/TR3 数据手册

BYG23M

Vishay General Semiconductor

www.vishay.com

Ultrafast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• High reverse voltage

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

I_R

1.5 A

1000 V

30 A

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

5.0 μA

75 ns

t_rr

E_R

20 mJ

150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYG23M

UNIT

Device marking code

BYG23M

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

1000

1.5

Average forward current at T_A= 65 °C

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) I_(BR)R= 1 A, T_J= 25 °C

E_R

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Revision: 21-Dec-11

Document Number: 88962

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与BYG23M-HE3/TR3相关器件

型号	品牌	获取价格	描述	数据表
BYG23MHE3_A/H	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA
BYG23MHE3_A/I	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA
BYG23MHM3_A/H	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA
BYG23MR3	TSC	获取价格	High Efficient Surface Mount Rectifiers
BYG23MR3G	TSC	获取价格	High Efficient Surface Mount Rectifiers
BYG23T	VISHAY	获取价格	High Voltage Ultrafast Avalanche SMD Rectifiers
BYG23T-M3	VISHAY	获取价格	Glass passivated pellet chip junction
BYG23T-TR	VISHAY	获取价格	Glass passivated pellet chip junction
BYG23T-TR3	VISHAY	获取价格	Glass passivated pellet chip junction
BYG24	VISHAY	获取价格	Fast Avalanche SMD Rectifier

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