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BYG22D-E3 PDF预览

BYG22D-E3

更新时间: 2024-11-15 04:10:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 98K
描述
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214, PLASTIC, SIMILAR TO SMA, 2 PIN, Rectifier Diode

BYG22D-E3 数据手册

 浏览型号BYG22D-E3的Datasheet PDF文件第2页浏览型号BYG22D-E3的Datasheet PDF文件第3页浏览型号BYG22D-E3的Datasheet PDF文件第4页浏览型号BYG22D-E3的Datasheet PDF文件第5页 
BYG22  
Vishay Semiconductors  
VISHAY  
Ultra Fast Avalanche SMD Rectifier  
Features  
• Controlled avalanche characteristic  
• Glass passivated junction  
• Low reverse current  
• Low forward voltage  
• Soft recovery characteristic  
• Very fast reverse recovery time  
• Good switching characteristics  
• Wave and reflow solderable  
15811  
Applications  
Surface mounting  
Super fast rectifier  
Freewheeling diodes in SMPS and converters  
Snubber diodes  
Parts Table  
Part  
Type differentiation  
VR = 50 V @ IFAV = 2 A  
Package  
BYG22A  
BYG22B  
BYG22D  
DO-214AC  
V
V
R = 100 V @ IFAV = 2 A  
R = 200 V @ IFAV = 2 A  
DO-214AC  
DO-214AC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
50  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
BYG22A  
VR = VRRM  
BYG22B  
BYG22D  
VR = VRRM  
100  
V
200  
35  
V
A
Peak forward surge current  
Average forward current  
tp = 10 ms, half sinewave  
IFSM  
IFAV  
2
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 150  
°C  
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 25 °C  
ER  
20  
mJ  
Document Number 86011  
Rev. 1.5, 09-Oct-00  
www.vishay.com  
1

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