Datasheet > BYG22D-HE3/TR

BYG22D-HE3/TR

更新时间： 2024-09-24 14:41:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BYG22D-HE3/TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	ROHS COMPLIANT, PLASTIC, SMA, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

BYG22D-HE3/TR 数据手册

BYG22A thru BYG22D

Vishay General Semiconductor

www.vishay.com

Ultrafast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• Low forward voltage

• Soft recovery characteristic

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

I_R

50 V to 200 V

35 A

MECHANICAL DATA

Case: DO-214AC (SMA)

1.0 μA

1.1 V

V_F

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

t_rr

25 ns

E_R

20 mJ

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYG22A

BYG22B

100

BYG22D

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

2.0

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

E_R

°C

I_(BR)R= 1 A, T_J= 25 °C

Operating junction and storage temperature range T_J, T_STG

- 55 to + 150

Revision: 21-Dec-11

Document Number: 88959

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与BYG22D-HE3/TR相关器件

型号	品牌	获取价格	描述	数据表
BYG22DHE3/TR3	VISHAY	获取价格	DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
BYG22D-HE3/TR3	VISHAY	获取价格	DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
BYG22DHE3_A/H	VISHAY	获取价格	Rectifier Diode,
BYG22DHE3-TR	VISHAY	获取价格	Ultrafast Avalanche SMD Rectifier
BYG22DHM3/TR	VISHAY	获取价格	DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLA
BYG22DHM3_A/H	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AC, SMA, 2
BYG22DHM3_A/I	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AC, SMA, 2
BYG22D-M3/HM3	VISHAY	获取价格	Ultrafast Avalanche SMD Rectifier
BYG22D-M3/TR3	VISHAY	获取价格	DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLA
BYG22DTR3	VISHAY	获取价格	Ultrafast Avalanche SMD Rectifier

与BYG22D-HE3/TR相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

8
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

BYG22D-HE3/TR

BYG22D-HE3/TR 技术参数

BYG22D-HE3/TR 数据手册

与BYG22D-HE3/TR相关器件

与BYG22D-HE3/TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BYG22D-HE3/TR

BYG22D-HE3/TR 技术参数

BYG22D-HE3/TR 数据手册

与BYG22D-HE3/TR相关器件

与BYG22D-HE3/TR相关文章

您还可以找

您在本页遇到什么问题？