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BYG22D

更新时间: 2024-11-13 22:28:03
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管局域网超快速恢复二极管
页数 文件大小 规格书
5页 62K
描述
Super Fast Silicon Mesa SMD Rectifier

BYG22D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
最大非重复峰值正向电流:35 A元件数量:1
最高工作温度:150 °C最大输出电流:2 A
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

BYG22D 数据手册

 浏览型号BYG22D的Datasheet PDF文件第2页浏览型号BYG22D的Datasheet PDF文件第3页浏览型号BYG22D的Datasheet PDF文件第4页浏览型号BYG22D的Datasheet PDF文件第5页 
BYG22  
Vishay Telefunken  
Super Fast Silicon Mesa SMD Rectifier  
Features  
Controlled avalanche characteristic  
Glass passivated junction  
Low reverse current  
Low forward voltage  
Soft recovery characteristic  
Very fast reverse recovery time  
Good switching characteristics  
Wave and reflow solderable  
15 811  
Applications  
Surface mounting  
Super fast rectifier  
Freewheeling diodes in SMPS and converters  
Snubber diodes  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
50  
100  
200  
35  
Unit  
V
V
V
A
BYG22A  
BYG22B  
BYG22D  
V =V  
R
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
Peak forward surge current  
Average forward current  
Junction and storage  
temperature range  
t =10ms,  
half sinewave  
I
p
FSM  
I
2
A
C
FAV  
T =T  
–55...+150  
j
stg  
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =25 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Junction ambient mounted on epoxy–glass hard tissue  
Test Conditions  
Symbol Value  
Unit  
K/W  
K/W  
K/W  
K/W  
T =const.  
L
R
25  
thJL  
thJA  
thJA  
thJA  
R
R
R
150  
125  
100  
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu  
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu  
2
3
Document Number 86011  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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