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BYC10-600 PDF预览

BYC10-600

更新时间: 2024-09-18 17:01:51
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
10页 415K
描述
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package

BYC10-600 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:HYPER FAST RECOVERY POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.9 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:71 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified参考标准:IEC-60134
最大重复峰值反向电压:600 V最大反向电流:200 µA
最大反向恢复时间:0.055 µs表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYC10-600 数据手册

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BYC10-600  
Hyperfast power diode  
Rev.01 - 29 May 2018  
Product data sheet  
1. General description  
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.  
2. Features and benefits  
Extremely fast switching  
Low reverse recovery current  
Low thermal resistance  
Reduces switching losses in associated MOSFET  
3. Applications  
Continuous Current Mode (CCM) Power Factor Correction (PFC)  
Half-bridge/full-bridge switched-mode power supplies  
Half-bridge lighting ballasts  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VRRM  
IF(AV)  
IFRM  
repetitive peak reverse  
voltage  
600  
10  
V
A
A
average forward current δ = 0.5; Tmb ≤ 78 °C; square-wave pulse;  
Fig. 1; Fig. 2  
repetitive peak forward δ = 0.5 ; Tmb ≤ 78 °C; square-wave pulse  
20  
current  
IFSM  
non-repetitive peak  
forward current  
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse  
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse  
Conditions  
65  
A
71  
A
Symbol Parameter  
Static characteristics  
Min  
Typ  
Max  
Unit  
VF  
Dynamic characteristics  
trr reverse recovery time  
forward voltage  
IF = 10 A; Tj = 150 °C; Fig. 4  
-
1.4  
19  
1.8  
V
IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs;  
Tj = 25 °C; Fig. 6  
-
-
ns  

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