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BYC10D-600 PDF预览

BYC10D-600

更新时间: 2024-11-10 17:01:15
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 424K
描述
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.

BYC10D-600 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-3/2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7应用:HYPER FAST RECOVERY POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.5 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:71 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
参考标准:IEC-60134最大重复峰值反向电压:600 V
最大反向电流:200 µA最大反向恢复时间:0.03 µs
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

BYC10D-600 数据手册

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BYC10D-600  
Hyperfast power diode  
Rev.02 - 23 February 2018  
Product data sheet  
1. General description  
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.  
2. Features and benefits  
Low reverse recovery current and low thermal resistance  
Reduces switching losses in associated MOSFET  
3. Applications  
Continuous Current Mode (CCM) Power Factor Correction (PFC)  
Half-bridge/full-bridge switched-mode power supplies  
Half-bridge lighting ballasts  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VRRM  
IF(AV)  
IFRM  
repetitive peak reverse  
voltage  
600  
10  
20  
65  
71  
V
A
A
A
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 93 °C;  
Fig. 1; Fig. 2  
repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 93 °C;  
current  
square-wave pulse  
IFSM  
non-repetitive peak  
forward current  
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;  
Fig. 3  
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse  
A
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
VF  
forward voltage  
IF = 10 A; Tj = 25 °C; Fig. 5  
IF = 10 A; Tj = 150 °C; Fig. 5  
-
-
2
2.5  
V
V
1.4  
1.8  
Dynamic characteristics  
trr reverse recovery time  
IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs;  
Tj = 25 °C; Fig. 6  
-
18  
-
ns  

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