Datasheet > BUW1215

BUW1215

更新时间： 2024-11-03 22:16:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	210K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUW1215 数据手册

BUW1215

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

HIGH VOLTAGE CAPABILITY (> 1500 V)

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

HORIZONTAL DEFLECTION FOR HIGH-END

COLOUR TV AND 21" MONITORS

DESCRIPTION

The BUW1215

manufactured

using

Multiepitaxial Mesa technology for cost-effective

high performance and uses a Hollow Emitter

structure to enhance switching speeds.

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

1500

700

Unit

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

200

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

February 2002

12 3 4 5 6 7

中文翻译

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