Datasheet > BUW131H

BUW131H

更新时间： 2024-01-01 09:34:00

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	102K
描述
isc Silicon NPN Power Transistor

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BUW131H 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUW131H

DESCRIPTION

·High Switching Speed

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 450V

APPLICATIONS

·Designed for use in very fast switching applications in

inductive circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

MAX

850

450

UNIT

Collector- Emitter Voltage

(V_BE= 0)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

I_CM

I_B

I_BM

Base Current-Peak

Collector Power Dissipation

@T_C=25℃

P_C

125

200

-65~200

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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