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BUV60 PDF预览

BUV60

更新时间: 2024-11-03 22:17:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 66K
描述
SWITCHMODE Series NPN Silicon Power Transistor

BUV60 数据手册

 浏览型号BUV60的Datasheet PDF文件第2页浏览型号BUV60的Datasheet PDF文件第3页浏览型号BUV60的Datasheet PDF文件第4页 
ON Semiconductort  
BUV20  
BUV60  
SWITCHMODEt Series  
NPN Silicon Power Transistor  
. . . designed for high speed, high current, high power applications.  
50 AMPERES  
NPN SILICON  
POWER  
High DC current gain:  
h
FE  
min = 20 at I = 25 A  
C
METAL TRANSISTOR  
125 VOLTS  
= 10 at I = 50 A  
C
Low V  
:
CE(sat)  
V
250 WATTS  
max. = 0.6 V at I = 25 A  
C
CE(sat)  
= 0.9 V at I = 50 A  
C
Very fast switching times:  
T = 0.25 µs at I = 50 A  
F
C
MAXIMUM RATINGS  
Rating  
Symbol  
BUV20  
BUV60  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Collector–Emititer Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
125  
7
CEO(sus)  
CASE 197A–05  
TO–204AE  
(TO–3)  
V
CBO  
V
EBO  
160  
260  
Collector–Emitter Voltage (V  
–1.5 V)  
=
=
V
CEX  
160  
150  
260  
260  
BE  
Collector–Emitter voltage (R  
V
CER  
Vdc  
BE  
100 )  
Collector–Current — Continuous  
— Peak (PW v  
I
50  
60  
Adc  
Apk  
C
I
CM  
10 ms)  
Base–Current continuous  
I
B
10  
Adc  
Total Power Dissipation @ T  
=
P
D
250  
Watts  
C
25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to 200  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
BUV20  
BUV60  
Unit  
Thermal Resistance, Junction to  
Case  
θ
0.7  
_C/W  
JC  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
80  
120  
160  
200  
T , TEMPERATURE (°C)  
C
Figure 1. Power Derating  
1
Semiconductor Components Industries, LLC, 2001  
Publication Order Number:  
May, 2001 – Rev. 10  
BUV20/D  

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TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 9A I(C) | TO-258VAR