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BUV98V PDF预览

BUV98V

更新时间: 2024-11-17 22:17:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 105K
描述
NPN TRANSISTOR POWER MODULE

BUV98V 数据手册

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BUV98V  
NPN TRANSISTOR POWER MODULE  
HIGH CURRENT POWER BIPOLAR MODULE  
VERY LOW Rth JUNCTION CASE  
SPECIFIED ACCIDENTAL OVERLOAD  
AREAS  
ISOLATED CASE (2500V RMS)  
EASY TO MOUNT  
LOW INTERNAL PARASITIC INDUCTANCE  
INDUSTRIAL APPLICATIONS:  
MOTOR CONTROL  
SMPS & UPS  
WELDING EQUIPMENT  
Pin 4 not connected  
ISOTOP  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Collector-Emitter Voltage (VBE = -5 V)  
Value  
1000  
450  
Unit  
VCEV  
V
V
VCEO(sus) Collector-Emitter Voltage (IB = 0)  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage (IC = 0)  
Collector Current  
7
V
30  
A
Collector Peak Current (tp = 10 ms)  
Base Current  
60  
A
8
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp = 10 ms)  
16  
A
o
Total Dissipation at Tc = 25 C  
150  
W
oC  
oC  
oC  
Storage Temperature  
-55 to 150  
150  
Max. Operating Junction Temperature  
Insulation Withstand Voltage (AC-RMS)  
VISO  
2500  
1/7  
September1997  

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