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BUL45F

更新时间： 2024-11-13 22:17:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 395K
描述
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

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BUL45F 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：PLASTIC, ISOLATED TO-220, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：5 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：7JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：35 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：12 MHzBase Number Matches：1

BUL45F 数据手册

 浏览型号BUL45F的Datasheet PDF文件第2页浏览型号BUL45F的Datasheet PDF文件第3页浏览型号BUL45F的Datasheet PDF文件第4页浏览型号BUL45F的Datasheet PDF文件第5页浏览型号BUL45F的Datasheet PDF文件第6页浏览型号BUL45F的Datasheet PDF文件第7页 
Order this document  
by BUL45/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
High Voltage SWITCHMODE Series  
POWER TRANSISTOR  
5.0 AMPERES  
Designed for use in electronic ballast (light ballast) and in Switchmode Power  
supplies up to 50 Watts. Main features include:  
700 VOLTS  
35 and 75 WATTS  
•
Improved Efficiency Due to:  
— Low Base Drive Requirements (High and Flat DC Current Gain h  
— Low Power Losses (On–State and Switching Operations)  
)
FE  
— Fast Switching: t = 100 ns (typ) and t = 3.2 µs (typ)  
fi si  
— Fast Switching: @ I = 2.0 A, I = I = 0.4 A  
C
B1 B2  
•
•
•
Full Characterization at 125°C  
Tight Parametric Distributions Consistent Lot–to–Lot  
BUL45F, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL45  
BUL45F  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
400  
700  
9.0  
BUL45  
CASE 221A–06  
TO–220AB  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak(1)  
I
C
5.0  
10  
I
CM  
Base Current  
I
B
2.0  
Adc  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
75  
0.6  
35  
0.28  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
J stg  
– 65 to 150  
°C  
THERMAL CHARACTERISTICS  
Rating  
BUL45F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Symbol MJE18006 MJF18006  
Unit  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
1.65  
62.5  
3.55  
62.5  
°C/W  
— Junction to Ambient  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
10  
100  
CE  
CES EB  
CES  
(T = 125°C)  
C
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995
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