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BUK9515-100A PDF预览

BUK9515-100A

更新时间: 2024-11-10 21:55:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 72K
描述
N-Channel Enhancement mode logic Level field-Effect power Transistor

BUK9515-100A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.19Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):230 W
最大脉冲漏极电流 (IDM):313 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9515-100A 数据手册

 浏览型号BUK9515-100A的Datasheet PDF文件第2页浏览型号BUK9515-100A的Datasheet PDF文件第3页浏览型号BUK9515-100A的Datasheet PDF文件第4页浏览型号BUK9515-100A的Datasheet PDF文件第5页浏览型号BUK9515-100A的Datasheet PDF文件第6页浏览型号BUK9515-100A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
BUK9515-100A  
BUK9615-100A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode logic  
level field-effect power transistor in a  
plastic envelope available in  
TO220AB and SOT404 . Using  
trench’ technology which features  
very low on-state resistance. It is  
intended for use in automotive and  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
100  
75  
230  
175  
V
A
W
˚C  
RDS(ON)  
general  
purpose  
switching  
resistance  
V
GS = 5 V  
15  
14.4  
m  
mΩ  
applications.  
VGS = 10 V  
PINNING  
TO220AB & SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN DESCRIPTION  
tab  
d
mb  
1
2
3
gate  
drain  
source  
2
g
1
2 3  
1
3
TO220AB  
SOT404  
tab/mb drain  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Non-repetitive gate-source voltage tp50µS  
-
-
-
-
-
100  
100  
10  
V
V
V
V
VDGR  
±VGS  
±VGSM  
RGS = 20 kΩ  
-
15  
ID  
ID  
IDM  
Ptot  
Tstg, Tj  
Drain current (DC)  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Tmb = 25 ˚C  
-
-
-
-
75  
53  
313  
230  
175  
A
A
A
W
˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to  
ambient(TO220AB)  
Thermal resistance junction to  
ambient(SOT404)  
-
-
0.65  
K/W  
in free air  
60  
50  
-
-
K/W  
K/W  
Minimum footprint, FR4  
board  
November 1999  
1
Rev 1.000  

BUK9515-100A 替代型号

型号 品牌 替代类型 描述 数据表
PSMN009-100P,127 NXP

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