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BUK9518-55 PDF预览

BUK9518-55

更新时间: 2024-11-10 22:32:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 68K
描述
TrenchMOS transistor Logic level FET

BUK9518-55 数据手册

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Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
BUK9518-55  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode logic  
level field-effect power transistor in a  
plastic envelope using ’trench’  
technology. The device features very  
low on-state resistance and has  
integral zener diodes giving ESD  
protection up to 2kV. It is intended for  
use in automotive and general  
purpose switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
55  
57  
125  
175  
18  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 5 V  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
s
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
55  
55  
10  
57  
40  
228  
125  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage  
Human body model  
(100 pF, 1.5 k)  
-
2
kV  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.2  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
in free air  
60  
-
K/W  
April 1998  
1
Rev 1.000  

BUK9518-55 替代型号

型号 品牌 替代类型 描述 数据表
BUK9518-55A NXP

完全替代

TrenchMOS logic level FET
BUK9518-55,127 NXP

类似代替

BUK9518-55 - N-channel TrenchMOS FET TO-220 3-Pin

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