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BUK9528-100A,127 PDF预览

BUK9528-100A,127

更新时间: 2024-11-12 03:03:03
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 83K
描述
BUK9528-100A - N-channel TrenchMOS logic level FET TO-220 3-Pin

BUK9528-100A,127 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
雪崩能效等级(Eas):45 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):49 A最大漏极电流 (ID):49 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):166 W最大脉冲漏极电流 (IDM):195 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

BUK9528-100A,127 数据手册

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Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
BUK9528-100A  
BUK9628-100A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode logic  
level field-effect power transistor in a  
plastic envelope available in  
TO220AB and SOT404 . Using  
trench’ technology which features  
very low on-state resistance. It is  
intended for use in automotive and  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
100  
49  
166  
175  
V
A
W
˚C  
RDS(ON)  
general  
purpose  
switching  
resistance  
V
GS = 5 V  
28  
27  
m  
mΩ  
applications.  
VGS = 10 V  
PINNING  
TO220AB & SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN DESCRIPTION  
tab  
d
mb  
1
2
3
gate  
drain  
source  
2
g
1
2 3  
1
3
TO220AB  
SOT404  
tab/mb drain  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Non-repetitive gate-source voltage tp50µS  
-
-
-
-
-
100  
100  
10  
V
V
V
V
VDGR  
±VGS  
±VGSM  
RGS = 20 kΩ  
-
15  
ID  
ID  
IDM  
Ptot  
Tstg, Tj  
Drain current (DC)  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Tmb = 25 ˚C  
-
-
-
-
49  
34  
195  
166  
175  
A
A
A
W
˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to  
ambient(TO220AB)  
Thermal resistance junction to  
ambient(SOT404)  
-
-
0.9  
K/W  
in free air  
60  
50  
-
-
K/W  
K/W  
Minimum footprint, FR4  
board  
March 2000  
1
Rev 1.000  

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