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BUK953R2-40B PDF预览

BUK953R2-40B

更新时间: 2024-11-11 09:02:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
16页 303K
描述
TrenchMOS logic level FET

BUK953R2-40B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36Is Samacsys:N
雪崩能效等级(Eas):1200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):75 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):888 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK953R2-40B 数据手册

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BUK95/96/9E3R2-40B  
TrenchMOS™ logic level FET  
Rev. 04 — 14 November 2003  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
Philips High-Performance Automotive TrenchMOS™ technology.  
1.2 Features  
Very low on-state resistance  
175 °C rated  
Q101 compliant  
Logic level compatible.  
1.3 Applications  
Automotive systems  
12 V loads  
Motors, lamps and solenoids  
General purpose power switching.  
1.4 Quick reference data  
EDS(AL)S 1.2 J  
ID 100 A  
RDSon = 2.7 m(typ)  
Ptot 300 W.  
2. Pinning information  
Table 1:  
Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
d
s
mb  
mb  
[1]  
2
drain (d)  
3
source (s)  
g
mb  
mounting base,  
connected to  
drain (d)  
MBB076  
2
1
3
MBK116  
1
2 3  
MBK112  
MBK106  
1
2 3  
SOT226 (I2-PAK)  
SOT404 (D2-PAK)  
SOT78 (TO-220AB)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  

BUK953R2-40B 替代型号

型号 品牌 替代类型 描述 数据表
BUK953R2-40B,127 NXP

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