Datasheet > BUK956R1-100E,127

BUK956R1-100E,127

更新时间： 2024-10-01 19:50:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	209K
描述
N-channel TrenchMOS logic level FET TO-220 3-Pin

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BUK956R1-100E,127 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-220	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.82
配置：	Single	最大漏极电流 (Abs) (ID)：	120 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	349 W
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin (Sn)	Base Number Matches：	1

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BUK956R1-100E

N-channel TrenchMOS logic level FET

11 September 2012

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

•

1.3 Applications

12V, 24V and 48V Automotive systems

•

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

349

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 1

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 25 A; T_j= 25 °C; Fig. 11

4.85

6.1

mΩ

V_GS= 5 V; I_D= 25 A; V_DS= 80 V;

Fig. 13; Fig. 14

[1] Continuous current is limited by package.

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