Datasheet > BUK9518-30

BUK9518-30

更新时间： 2024-09-30 22:32:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
8页	49K
描述
TrenchMOS transistor Logic level FET

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中文翻译

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数据手册
替代型号

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BUK9518-30 数据手册

Philips Semiconductors

Product specification

TrenchMOS transistor

Logic level FET

BUK9518-30

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode logic

level field-effect power transistor in a

plastic envelope using ’trench’

technology. The device features very

low on-state resistance and has

integral zener diodes giving ESD

protection up to 2kV. It is intended for

use in automotive and general

purpose switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

103

175

˚C

mΩ

R_DS(ON)

resistance

V_GS= 5 V

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

I_DM

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

220

103

175

˚C

R_GS= 20 kΩ

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

P_tot

T_stg, T_j

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-mb}

Thermal resistance junction to

mounting base

1.45

K/W

R_{th j-a}

Thermal resistance junction to

ambient

in free air

K/W

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge capacitor

voltage, all pins

Human body model

(100 pF, 1.5 kΩ)

December 1997

Rev 1.100

12 3 4 5 6 7 8

中文翻译

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BUK9518-30 替代型号

型号	品牌	替代类型	描述	数据表
BUK7510-30	NXP	功能相似	TrenchMOS transistor Standard level FET
BUK7506-30	NXP	功能相似	TrenchMOS transistor Standard level FET

与BUK9518-30相关器件

型号	品牌	获取价格	描述	数据表
BUK9518-30,127	NXP	获取价格	55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
BUK9518-30127	NXP	获取价格	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp
BUK9518-55	NXP	获取价格	TrenchMOS transistor Logic level FET
BUK9518-55,127	NXP	获取价格	BUK9518-55 - N-channel TrenchMOS FET TO-220 3-Pin
BUK9518-55A	NXP	获取价格	TrenchMOS logic level FET
BUK951R6-30E	NXP	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
BUK951R9-40E	NXP	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
BUK9520-100A	NXP	获取价格	TrenchMOS logic level FET
BUK9520-100B	NXP	获取价格	N-channel TrenchMOS logic level FET
BUK9520-100B,127	NXP	获取价格	N-channel TrenchMOS logic level FET TO-220 3-Pin