Datasheet > BUK7Y4R8-60E

BUK7Y4R8-60E

更新时间： 2024-11-27 12:51:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	296K
描述
N-channel 60 V, 4.8 mÎ© standard level MOSFET in LFPAK56

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BUK7Y4R8-60E 数据手册

BUK7Y4R8-60E

N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56

20 February 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with V_GS(th)rating of greater than 1 V at 175 °C

•

3. Applications

12 V Automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

[1]

100

238

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

2.9

4.8

mΩ

I_D= 25 A; V_DS= 48 V; V_GS= 10 V;

T_j= 25 °C; Fig. 13; Fig. 14

22.2

[1] Continuous current is limited by package.

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