Datasheet > BUK7Y53-100B,115

BUK7Y53-100B,115

更新时间： 2024-02-28 15:45:47

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
14页	183K
描述
N-channel TrenchMOS standard level FET SOIC 4-Pin

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技术参数
数据手册

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BUK7Y53-100B,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.76	Base Number Matches：	1

BUK7Y53-100B,115 数据手册

BUK7Y53-100B

N-channel TrenchMOS standard level FET

Rev. 3 — 13 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard level gate drive

sources

1.3 Applications

12 V, 24 V and 42 V loads

Automotive systems

DC-to-DC converters

Engine management

General purpose power switching

Solenoid drivers

Transmission control

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

100

24.8

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 10 A;

T_j= 25 °C; see Figure 12;

see Figure 13

mΩ

on-state

resistance

12 3 4 5 6 7...14

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